unisonic technologies co., ltd 2sb1132 pnp silicon transistor www.unisonic.com.tw 1 of 5 copyright ? 2012 unisonic technologies co., ltd qw-r208-016.c medium power transistor ? description the utc 2sb1132 is a epitaxial planar type pnp silicon transistor. ? features * low v ce(sat) . v ce(sat) = -0.2v(typ.) (i c /i b = -500ma/-50ma) ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 2sb1132l-x-ab3-r 2SB1132G-X-AB3-R sot-89 b c e tape reel 2sb1132l-x-tn3-r 2sb1132g-x-tn3-r to-252 b c e tape reel 2sb1132l-x-tn3-t 2sb1132g-x-tn3-t to-252 b c e tube
2sb1132 pnp silicon transistor unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r208-016.c ? absolute maximum ratings (t a =25 c, unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -32 v emitter-base voltage v ebo -5 v collector current dc i c -1 a collector current ( single pulse, pw=100ms ) pulse -2 a collector power dissipation sot-89 p c 0.5 w to-252 1 w junction temperature t j 150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25 c, unless otherwise specified) parameter symbol test conditions min typ max unit collector base breakdown voltage bv cbo i c = -50 a -40 v collector emitter breakdown voltage bv ceo i c = -1ma -32 v emitter base breakdown voltage bv ebo i e = -50 a -5 v collector cut-off current i cbo v cb = -20v -0.5 a emitter cut-off current i ebo v eb = -4v -0.5 a collector-emitter satu ration voltage v ce ( sat ) i c = -500ma,i b = -50ma (note) -0.2 -0.5 v dc current transfer ratio h fe v ce = -3v,i c = -0.1a (note) 82 390 transition frequency f t v ce = -5v, i e = 50ma, f=30mhz 150 mhz output capacitance c ob v cb = -10v, i e =0a, f=1mhz 20 30 pf note: measured using pulse current. ? classification of h fe rank p q r range 82-180 120-270 180-390
2sb1132 pnp silicon transistor unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r208-016.c ? typical characteristics 0 -0.2 -500 -1 base to emitter voltage, v be (v) grounded emitter propagation characteristics collector current, ic(ma) -200 -1 -2 -5 -10 -20 200 50 collector current, ic(ma) dc current gain vs. collector current ( ) dc current gain, h fe 100 -0.4 -0.6 -0.8 -1.6 -1.4 -1.2 -1.0 -2 -5 -10 v ce =-6v t a =100 t a =25 t a = -55 0 -500 0 collector to emitter voltage, v ce (v) grounded emitter output characteristics collector current, ic(ma) -100 -0.4 -0.8 -1.6 -2.0 -1.2 -200 -300 -400 -2.0 i b =0ma t a =25 -2.5 -1.5 -1.0 -0.5 -3.0 -3.5 -4.0 -4.5 -5.0 -50-100 -200 -500-1000 500 1000 t a =25 v ce = -3v v ce = -1v -1 -2 -5 -10 -20 200 50 collector current :ic(ma) dc current gain vs.collector current ( ) dc current gain, h fe 100 -50-100 -200 -500-1000 500 1000 v ce = -3v t a =100 t a =25 t a = -55 -1 -2 -5 -10 -20 -0.05 -0.01 collector current, ic(ma) collector-emitter saturation voltage vs. collector current collector saturation voltage, v ce(sat) ( v) -0.02 -50-100-200-500-1000 -0.1 -0.2 -2000 -0.5 -1 t a =25 i c /i b =10 -1 -1.0 0 base current, i b (ma) collector emitter saturation voltage vs. base current collector to emitter voltage, v ce (v) -0.2 -2 -5 -20 -50 -10 -0.4 -0.6 -0.8 -100 t a =25 i c = -500ma i c = -300ma -20 -50 -100
2sb1132 pnp silicon transistor unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r208-016.c ? typical characteristics(cont.) 0 -0.2 -0.5 -1 -2 -0.05 -0.01 collector to emitter voltage, v ce (v) safe operation area collector current, ic (a) -0.02 -5 -10 -20 -50 -0.1 -0.2 0.001 0.01 0.1 1 10 1 0.1 time, t(s) transient thermal resistance transient thermal resistance (c/w) 100 100 1000 10 1000 -1 20 emitter current, i b (ma) gain bandwidth product vs. emitter current transition frequency, f t (mhz) 50 -2 -5 -20 -50 -10 100 200 -100 t a =25c v ce = -5v -0.5 10 collector to base voltage, v cb (v) collector output capacitance vs.collector-base voltage collector output capacitance, c ob (pf) 20 -1 -2 -10 -20 -5 50 100 f=1mhz t a =25c i e =0a -0.5 -1 -2 -5 p w = 1 0 0 m s * p w = 1 0 m s * d c t a =25c *single pulse t a =25c power derating 1.6 0.6 25 50 75 150 100 1.4 1.2 1 0.8 ambient temperature, t a ( ) 0 0.4 0.2 0.0 125 175 to-252 sot-89
2sb1132 pnp silicon transistor unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r208-016.c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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